| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that, in the case of a film forming operation for a plurality of semiconductor substrates 3, there is a limitation in an accurate measurement of an aging change of radiation heat by a thermocouple 8 embedded in a susceptor 4 shielded from the radiation heat under the semiconductor substrate 3. SOLUTION: A CVD device 101 comprises a reaction tube 2, the susceptor 4, an infrared lamp 5, a gas inlet 7a for flowing a mixed gas 6 onto the semiconductor substrate 3 and a gas outlet 7b for exhausting the mixed gas 6, the thermocouple 8 which is embedded in a dummy member 102 composed of the same material with the semiconductor substrate 3 on the susceptor 4 near the semiconductor substrate 3, and a heating temperature control unit 9 for controlling the heating output of the infrared lamp 5 on the basis of a measured temperature of the thermocouple 8. COPYRIGHT: (C)2005,JPO&NCIPI
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