FILM FORMATION METHOD USING CHARGED PARTICLE BEAM, SELECTIVE ETCHING METHOD, AND CHARGED PARTICLE BEAM DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a charged particle beam device capable of forming a film in an intended scanning area more effectively than before, with a film formation technology of scanning a converged charged particle beam, and capable of applying a selective etching on an intended scanning area more effectively than before, with a selective etching technology of scanning a converged charged particle beam. SOLUTION: A setting of an optical system as an optimum way of scanning charged particle beam, a beam staying period, and a scanning distance are found against an intended irradiation area for film formation and selective etching, depending on a deposition rate stored in advance or a scanning cycle dependent etching rate, and the result of judgment is displayed. COPYRIGHT: (C)2005,JPO&NCIPI