Dielectric memory and method for fabricating the same

摘要

A semiconductor device is provided with an insulating film which is formed on a semiconductor substrate and has a first recess, a capacitor lower electrode which is formed on the walls and the bottom of the first recess and has a second recess, and a capacitor insulating film which is formed on the walls and the bottom of the second recess and has a third recess, and a capacitor upper electrode embedded in the third recess.