| 摘要 |
The invention relates to a method of manufacturing a heterobipolar transistor, wherein epitaxially grown layers ( 2 to 11 ) on a substrate ( 1 ) are structured by etching. An emitter contact ( 31 ) and a base contact ( 32 ) are formed by simultaneous metallizing of an emitter layer ( 11 ) and a base layer ( 6 ). This method reduces the number of method steps required to manufacture a heterobipolar transistor and thus cuts time and cost which must invested in production.
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