| 摘要 |
PROBLEM TO BE SOLVED: To secure a lithography margin finely arranged contacts and further to eliminate a matching deviation from wires. SOLUTION: The nonvolatile semiconductor memory consists of striped element regions and element separation regions which are arranged repeatedly in turn in a 1st direction at a 1st pitch, contact plugs which are connected to the element regions and made of conductive materials arranged in the 1st direction at the 1st pitch, and of wires connected to the contact plugs, the width in a section of a contact plug cut by a plane orthogonal to the 1st direction being characterized in that a contact lower-end width defined by a place connected to an element region is larger than a contact upper-end width defined by a width in a place connected to a wire and the contact lower-end width is larger than the width of the element region. When a contact is formed after a conductive material is charged between gates, a pattern in etching is defined as a line shape and a wiring layer is formed of the conductive material of the contact at the same time. COPYRIGHT: (C)2005,JPO&NCIPI
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