| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an optical semiconductor integrated circuit device which can solve the problem caused by the conventional optical semiconductor integrated circuit devices, wherein the machining accuracy of the device is inferior, because the silicon nitride film of a antireflection film is used as an etching stopper film at the time of etching an insulating film, and the insulating film is removed by wet etching in a single process. SOLUTION: The optical semiconductor integrated circuit device manufactured by this method is constituted so that an insulating layer formed on the top surface of the antireflection film of a photodiode 21 may be removed by dry etching, after multiple wiring layers are formed on the top surface of a silicon substrate 24. At the removing of the insulating layer, a polycrystalline silicon film 51 is used as the etching stopper film. Therefore, the fluctuation of the thickness of a silicon nitride film which is the antireflection film of the photodiode 21 can be prevented, even when the dry etching is used, because the silicon nitride film will not be etched excessively. Consequently, the sensitivity of the photodiode 21 to the incident light can be improved and, at the same time, the photodiode 21 can be refined. COPYRIGHT: (C)2005,JPO&NCIPI
|
