发明名称 PROCESS FOR FORMING INSULATION FILM, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To tightly make an interlayer insulation film stick to a substrate by STP method, without exfliating the insulation film. SOLUTION: Insulation layer of a substrate is coated with an insulation material 20 of SiLK resin for adhesion, and then the insulation material 20 is heated at a temperature not higher than the crosslinking point to make it stick to the insulation layer. An interlayer insulation film 22, of the same material provided on a base film 21, is then pressed against the insulation material 20 for adhesion, while being heated at a low temperature. Thereafter, the base film 21 is exfoliated. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005108878(A) 申请公布日期 2005.04.21
申请号 JP20030336085 申请日期 2003.09.26
申请人 OKI ELECTRIC IND CO LTD 发明人 SHIMOKAWA MASAAKI
分类号 H01L21/768;H01L21/312;(IPC1-7):H01L21/312 主分类号 H01L21/768
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