发明名称 |
AC SENSING FOR A RESISTIVE MEMORY |
摘要 |
Alternating current is used to sense a logic state of a memory cell that has a resistive memory element. The memory element can be in an array and a memory device can include the array and peripheral circuitry for reading or sensing each memory cell in the array. The peripheral circuitry can include a clock/control circuit providing a control signal, which controls when a row of memory cells are sensed, a switching circuit for receiving a cellplate count signal and a bit count signal provided by the clock/control circuit, a cellplate line signal and a bit line signal from the memory cell, the switching circuit producing a first output signal and a second output signal, wherein one of the first output signal and the second output signal is at a supply voltage and the other of the first output signal and the second output signal alternates polarity with each sensing operation and a comparison circuit receiving the first output signal and the second output signal and outputting a signal corresponding to the logic sate of the memory cell. |
申请公布号 |
WO2005036557(A2) |
申请公布日期 |
2005.04.21 |
申请号 |
WO2004US32884 |
申请日期 |
2004.10.06 |
申请人 |
MICRON TECHNOLOGY, INC.;VOSHELL, THOMAS, W. |
发明人 |
VOSHELL, THOMAS, W. |
分类号 |
G11C7/06;G11C11/16;G11C13/00;G11C13/02;G11C16/26 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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