| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for dry etching of a Pt/PCMO(Pr<SB>1-x</SB>Ca<SB>x</SB>MnO<SB>3</SB>)/Pt stack. <P>SOLUTION: The method for dry etching of the PCMO stack includes a step in which a substrate is prepared, a step in which a barrier layer is deposited, a step in which an under electrode is deposited, a step in which a PCMO thin film is deposited, a step in which an upper electrode is deposited, a step in which a hard mask layer is deposited, a step in which photoresist is applied to and patterning is carried out, a step in which the hard mask layer is etched, a step in which dry etching carrying out of the upper electrode, a step in which dry etching carrying out of the PCMO layer consisting of plural step etching processes, a step in which dry etching carrying out of the under electrode, and a step in which a device having a PCMO base is completed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
