| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can mount various kinds of passive element applied to high-frequency circuit or the like, without causing enlargement of substrate area or package size, in a semiconductor device to which sealing structure of chip-size package type is applied. <P>SOLUTION: In an element structure RA of a semiconductor device 10, at least a pair of connection pads 12b, 12c, and individual wiring layers 15b, 15c connected with the connection pads 12b, 12c are formed at a predetermined position of a semiconductor substrate 11, where an integrated circuit is formed. A pair of electrode layers (a lower part electrode layer 16 and an upper part electrode layer 18), which are connected electrically with the individual wiring layers 15b, 15c and have a form, extending therethrough to a predetermined capacitance formation region are formed so that they face mutually via a dielectric layer 17, thereby forming a capacitance element (MIM capacitor) on an integrated circuit (circuit-forming region) via an insulating film (passivation film 13, surface protective film 14). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
