| 摘要 |
PROBLEM TO BE SOLVED: To provide a good semiconductor device employing one kind of metal in gate electrode of an nMOS and a pMOS, and to provide its fabricating process. SOLUTION: The semiconductor device comprises a semiconductor substrate (101), a gate insulation film (105) composed of a material principally comprising a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO<SB>2</SB>, or a mixture of a tetravalent metal oxide and SiON, a gate electrode (115) composed of a metal having a work function of 4-5.5 eV. The gate insulation film contains B when an nMOS structure is formed on the semiconductor substrate, and contains at least one of P and As when a pMOS structure is formed on the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI |
