| 摘要 |
PROBLEM TO BE SOLVED: To provide a laminated wafer manufacturing method that prevents the occurrence of dislocation on an Si<SB>1-x</SB>Ge<SB>x</SB>layer to grow a good-quality strain Si layer, and a laminated wafer. SOLUTION: The laminated wafer manufacturing method in which, an Si<SB>1-x</SB>Ge<SB>x</SB>(0<X<1) layer is formed on a surface of silicon monocrystalline wafer that serves at least as a bond wafer, at least one kind of a hydrogen ion or a noble gas ion is implanted through the Si<SB>1-x</SB>Ge<SB>x</SB>layer to form an ion-implanted layer, the surface of the Si<SB>1-x</SB>Ge<SB>x</SB>layer is brought into close contact with the surface of a base wafer via an insulation film or directly, subsequently separation is carried out at the ion-implanted layer, and then a thermal oxide layer is formed on the surface of a separation layer transferred to the base wafer by the separation, and the thermal oxide layer is removed to expose a SiGe layer, and an Si monocrystalline layer is epitaxially grown on the surface of the exposed SiGe layer, as well as the laminated wafer. COPYRIGHT: (C)2005,JPO&NCIPI
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