发明名称 ALUMINUM-CERAMIC JOINED SUBSTRATE AND METHOD FOR PRODUCING SAME
摘要 PROBLEM TO BE SOLVED: To provide an aluminum-ceramic joined substrate and a method for producing the same, in which the unevenness in a crystal grain distribution is made to small by reducing the crystal grain diameter of the aluminum so as to be able to prevent crack from being arisen in the ceramic substrate after heat-cycle and also, the lowering of heat-radiating property can be restrained when a heat-radiating fin etc. are fitted to the aluminum-ceramic joined substrate, by controlling the warping of an aluminum base plate with the heating when a semiconductor chip etc. is soldered. SOLUTION: In this producing method, when the aluminum plate 12 is directly joined to the ceramic substrate 14 by pouring molten aluminum so as to contact with the ceramic substrate 14 set in a mold and cooling and solidifying this molten aluminum, an additive, such as TiB-base alloy, Ca or Sr, etc., with which the lowering of thermal conductivity is restrained within 20% in comparison with the thermal conductivity of the pure aluminum plate and the crystal grain diameter of the aluminum plate becomes≤10 mm, is added into the molten aluminum. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005103560(A) 申请公布日期 2005.04.21
申请号 JP20030337106 申请日期 2003.09.29
申请人 DOWA MINING CO LTD 发明人 OSANAI HIDEYO
分类号 B22D19/00;C22C21/00;H01L23/14;H05K1/02;H05K7/20;(IPC1-7):B22D19/00 主分类号 B22D19/00
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