发明名称 |
Heterojunction bipolar transistor and manufacturing method making the same |
摘要 |
A method for improving a performance of a heterojunction bipolar transistor is provided. The method includes steps of providing a substrate; forming a first at least one semiconductor layer on the substrate; forming a second at least one semiconductor layer on the first at least one semiconductor layer; and inserting a thermal treatment process within the second at least one semiconductor layer so as to improve a performance of the heterojuntion bipolar transistor. Furthermore, the thermal treatment process is performed at a temperature ranged from 300° C. to 800° C.
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申请公布号 |
US2005085035(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20030687648 |
申请日期 |
2003.10.20 |
申请人 |
SHEN CHIH-CHIANG;CHU CHANG-JUNG;CHENG RUI-HUANG;CHEN YONG-YIN;HAYAFUJI NORIO;PENG CHIN-KUN |
发明人 |
SHEN CHIH-CHIANG;CHU CHANG-JUNG;CHENG RUI-HUANG;CHEN YONG-YIN;HAYAFUJI NORIO;PENG CHIN-KUN |
分类号 |
H01L21/331;H01L29/737;H01L29/739;(IPC1-7):H01L29/739 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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