Method for fabricating a gate structure of a FET and gate structure of a FET

摘要

A method for fabricating a gate structure of a FET, having: (a) deposition and patterning of a sacrificial layer sequence on a semiconductor substrate and uncovering of a gate section; (b) implantation of a channel doping into the gate section; (c) deposition and patterning of spacers at the sidewalls of the sacrificial layer sequence with the formation of a gate section that is not covered by the spacers; (d) introduction of a mask material into the gate section that is not covered by the spacers; (e) removal of the spacers selectively with respect to the sacrificial layer sequence and mask material); (f) implantation of a halo doping in regions uncovered by the removed spacers; (g) removal of the mask material; (h) formation of a gate on the gate section; and (j) removal of the sacrificial layer sequence selectively with respect to the gate.