发明名称 |
Endpoint detection in manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device that comprises the steps of providing a semiconductor wafer including a patterned layer, forming a first insulating layer over the patterned layer of the semiconductor wafer, the first insulating layer including a first index of refraction, forming a second insulating layer over the first insulating layer, the second insulating layer including a second index of refraction smaller than the first index of refraction, removing the second insulating layer by a planarizing process, and detecting a change in index of refraction during the planarizing process.
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申请公布号 |
US2005084990(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20030685484 |
申请日期 |
2003.10.16 |
申请人 |
LIU YUH-TURNG;CHEN KUANG-CHAO;SHIH HSUEH-HAO;YANG YUN-CHI;HUNG YUNG-TAI |
发明人 |
LIU YUH-TURNG;CHEN KUANG-CHAO;SHIH HSUEH-HAO;YANG YUN-CHI;HUNG YUNG-TAI |
分类号 |
G01R31/26;H01L21/302;H01L21/3105;H01L21/44;H01L21/461;H01L21/4763;H01L21/66;H01L21/768;(IPC1-7):H01L21/66;H01L21/476 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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