| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of always forming a stable resist pattern, when a liquid immersion exposure device is used. <P>SOLUTION: This resist pattern forming method comprises the steps of forming a resist film (R) on a semiconductor substrate (S) having a work film thereon, exposing the resist film with the liquid immersion exposure device which carries out exposure in a state, where the space between the resist film and an objective lens (1) is filled with a liquid (2), and developing the resist film. The method further comprises the step of forming a resist-protecting film (R1) which is insoluble in the liquid, on the resist film after the formation of the resist film and before the exposure of the resist film. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
