发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To reduce the cost of a semiconductor device. <P>SOLUTION: The manufacturing method of a semiconductor device comprises the processes of: forming a plurality of product formation regions, including a circuit and a plurality of first electrode pads on the principal surface of a semiconductor wafer; relocating a plurality of second electrode pads, having a arrangement pitch wider than that of the first electrode pads in the respective product formation regions; making individual pieces turn into the plurality of the product formation regions of the semiconductor wafer, and forming a plurality of the semiconductor devices each including the circuit, the plurality of the first electrode pads, and the plurality of the second electrode pads on the side of the first surface; and removing foreign matters, adhering to the first surface of the semiconductor device, after the process of forming the semiconductor device. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005109156(A) 申请公布日期 2005.04.21
申请号 JP20030340741 申请日期 2003.09.30
申请人 RENESAS TECHNOLOGY CORP 发明人 YAMAGUCHI YOSHIHIKO;FUJISHIMA ATSUSHI;OTA YUSUKE
分类号 H01L23/52;B08B7/00;H01L21/00;H01L21/30;H01L21/3205;H01L21/44;H01L21/48;H01L21/50;H01L21/56;H01L21/60;H01L21/66;H01L23/12;H01L23/31;H01L23/495 主分类号 H01L23/52
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