发明名称 PLASMA TREATMENT METHOD AND APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment method and a plasma treatment apparatus capable of raising the uniformity of treatments beginning with a doping concentration. SOLUTION: In such a state that a mixed gas consisting of a helium gas and a diborane gas is enclosed in a vacuum chamber 900 by stopping air exhaustion inside the vacuum chamber 900 and by stopping a supply of a gas into the vacuum chamber 900, while generating plasma in a vacuum container 1, a plasma treatment is carried out by supplying a high frequency power to a sample electrode 6 and introducing boron near a surface of a substrate 9. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005109453(A) 申请公布日期 2005.04.21
申请号 JP20040258451 申请日期 2004.09.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OKUMURA TOMOHIRO;SASAKI YUICHIRO;MAEJIMA SATOSHI;NAKAYAMA ICHIRO;MIZUNO BUNJI
分类号 H01L21/3065;H01L21/22;H01L21/265;H01L21/31;(IPC1-7):H01L21/265;H01L21/306 主分类号 H01L21/3065
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