发明名称 |
PLASMA TREATMENT METHOD AND APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment method and a plasma treatment apparatus capable of raising the uniformity of treatments beginning with a doping concentration. SOLUTION: In such a state that a mixed gas consisting of a helium gas and a diborane gas is enclosed in a vacuum chamber 900 by stopping air exhaustion inside the vacuum chamber 900 and by stopping a supply of a gas into the vacuum chamber 900, while generating plasma in a vacuum container 1, a plasma treatment is carried out by supplying a high frequency power to a sample electrode 6 and introducing boron near a surface of a substrate 9. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005109453(A) |
申请公布日期 |
2005.04.21 |
申请号 |
JP20040258451 |
申请日期 |
2004.09.06 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OKUMURA TOMOHIRO;SASAKI YUICHIRO;MAEJIMA SATOSHI;NAKAYAMA ICHIRO;MIZUNO BUNJI |
分类号 |
H01L21/3065;H01L21/22;H01L21/265;H01L21/31;(IPC1-7):H01L21/265;H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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