| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a display for forming a drive circuit in a CMOS configuration uniformly within surface, using a laminated TFT which uses a polycrystalline semiconductor. SOLUTION: After forming a gate electrode 32 and a gate insulating film on a substrate 12, an active layer 34 made of a polycrystalline semiconductor film is formed by a reactive thermal CVD method. A p-type source/drain layer 37 is allowed to remain only at a p-type TFT region 12p by the reactive thermal CVD method via an etching stopper layer 35a, in a shape of the gate electrode 32 of a p-type TFT region 12n and a p-type TFT region 12p, and further the active layer 34 is patterned into an island shape. An n-type source/drain layer 40 is film-formed by the reactive thermal CVD method via an etching stopper layer 35a in a shape of the gate electrode 32 of the n-type TFT region 12n. The p-type/n-type source/drain layers 37, 40 are patterned to form p-type/n-type source/drains 37a, 37b, 40a, 40b. COPYRIGHT: (C)2005,JPO&NCIPI |
