发明名称 Manufacturable chromeless alternating phase shift mask structure with phase grating
摘要 A chromeless APSM structure may be used to enable the pitch of features on the mask to be decreased by removing the chrome line between features, and thus remove the limit based on the size of the chrome line. The chromeless APSM may include primary features surrounded by a boundary region including sub resolution features. A relatively high precision lithography tool may be used in a first lithography step to print the features in the chromeless APSM structure. The boundary region may allow for a less precise lithography tool to be used in a second lithography step.
申请公布号 US2005084769(A1) 申请公布日期 2005.04.21
申请号 US20030688851 申请日期 2003.10.17
申请人 INTEL CORPORATION 发明人 PINKERTON TIM;CHENG WEN-HAO
分类号 G03C5/00;G03F1/00;G03F9/00;(IPC1-7):G03F9/00 主分类号 G03C5/00
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