发明名称 |
METHOD OF MAKING A VERTICAL ELECTRONIC DEVICE |
摘要 |
A semiconductor substrate having had a semiconductor device formed on the front side of the semiconductor substrate is subjected to an ion implant on the back side of the semiconductor substrate. The active surface of the doped back side is controllably heated to perform an implant anneal. The implant anneal of the back side of the semiconductor substrate is performed using a flash anneal process which avoids causing the destruction of the semiconductor device formed on the front side of the semiconductor substrate |
申请公布号 |
WO2005036598(A2) |
申请公布日期 |
2005.04.21 |
申请号 |
WO2004US31085 |
申请日期 |
2004.09.21 |
申请人 |
WAFERMASTERS, INC.;YOO, WOO SIK |
发明人 |
YOO, WOO SIK |
分类号 |
H01L21/00;H01L21/324 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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