| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film production method and a thin film production apparatus which enable a film to be deposited at a stable vapor deposition rate with high productivity, further, with which the controllability in the scattering direction of evaporated grains to be improved, and, in the case that a mixture thin film composed of two or more kinds of materials is deposited using a plurality of evaporation sources, the thin film excellent in compositional uniformity can be obtained. <P>SOLUTION: A material 13 is stored in a space sealed by a crucible 9 and a cover 11 having an opening 25. The material 13 is heated while introducing an inert gas into the sealed space, and the evaporated grains of the material are released from the opening 25 to deposit a thin film on the substrate 5 to be vapor-deposited. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
