| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To eliminate the problem of the increase in a switching magnetic field, involved in miniaturization of an element regarding a magnetroresistance effect element, and to provide a magnetic memory cell and a magnetic random access memory device. <P>SOLUTION: The element has a structure of a magnetic substance/a nonmagnetic substance/a magnetic substance/a nonmagnetic substance and a magnetic substance, where a first magnetic substance 1, a first nonmagnetic substance 2, a second magnetic substance 3, a second nonmagnetic substance 4 and a third magnetic substance 5 are successively laminated. Pieces of wiring 6 to 8 are connected to the first magnetic substance 1, the second magnetic substance 3 and the third magnetic substance 5, respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
