发明名称 METHOD OF FORMING WIRING, THIN-FILM TRANSISTOR, LIGHT-EMITTING DEVICE, AND LIQUID CRYSTAL DISPLAY, AND INKJET DEVICE FOR FORMING THEM
摘要 PROBLEM TO BE SOLVED: To solve a problem in forming a wiring line using an inkjet method, wherein it is difficult to shrink the width of a wiring line due to spreading of the dots on the wire-forming surface, while a wire line of a narrower width is demanded as progress in semiconductor devices is made, in particular, enhancement in refining and higher aperture ratio of pixels possessed by semiconductor devices. SOLUTION: A surface, on which a wiring line is to be formed, is coated with a photocatalytic substance, represented by TiO2, and the wiring line is formed by utilizing photocatalytic activation of the photocatalytic substance. For example, an electrically conductive substance mixed in a solvent is ejected by an inkjet method on the photocatalytic substance. Thereby, a wiring line, having a width narrower than the diameter of the dots formed by the inkjet method, namely a narrower-width wiring line, can be formed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005109390(A) 申请公布日期 2005.04.21
申请号 JP20030344202 申请日期 2003.10.02
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NAKAMURA OSAMU;OGINO KIYOBUMI
分类号 G02F1/1368;B01J35/02;B05D3/00;B05D5/12;C08J7/18;G21H1/00;H01L21/027;H01L21/28;H01L21/288;H01L21/3205;H01L21/336;H01L21/768;H01L27/32;H01L29/786;H01L51/00;H01L51/56;(IPC1-7):H01L21/288;G02F1/136;H01L21/320 主分类号 G02F1/1368
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