FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor which can surely prevent leakage current due to sneak current down to the gate electrode of the source and the drain regions at the edge of a field oxide film, without increasing the gate electrode area, and to provide a method for manufacturing the same. SOLUTION: The method for manufacturing the field effect transistor 1 includes a step of forming the field oxide film 3 by a selective oxidizing method on the front surface of a semiconductor substrate 2 made of a p--type silicon, etc., and a step of forming a rectangular gate electrode 5 made of a polysilicon film, etc. via a gate oxide film 4, such as a silicon oxide film, etc. on the window opening of the field oxide film 3 of the semiconductor substrate 2 to bridge the field oxide film 3. The method also includes a step of forming an element region 8, made of a source region 6 and a drain region 7 selectively diffusing arsenic (As) which is an n-type impurity at a high concentration on both sides of the gate electrode 5. The method also includes a step of forming a heavily-doped region 9 of boron (B) of a p-type impurity at the edge of the field oxide film 3. COPYRIGHT: (C)2005,JPO&NCIPI