| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nonvolatile memory element having a SONOS structure. SOLUTION: In the method, a structure is formed in which a silicon nitride film used as a charge trapping layer, and a polysilicon film used as a control gate electrode, are electrically insulated from each other. First, a silicon oxide film pattern and a silicon nitride film pattern are formed on a semiconductor substrate as a tunneling layer and on the charge trapping layer. Then a silicon oxinitride film, used as a shielding layer, is formed on the top surface, and side face of the silicon nitride film pattern and a gate insulating film is formed on the exposed surface of the semiconductor substrate by performing an oxidizing process. Thereafter, the control gate electrode is formed on the silicon oxinitride film and on the gate insulating film. COPYRIGHT: (C)2005,JPO&NCIPI
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