| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas rectifying member for a Czochralski single crystal pulling apparatus which provides a desired temperature gradient required for pulling the single crystal, does not cause pollution in the single crystal pulling apparatus and contamination of single crystal, and has high durability. SOLUTION: The gas rectifying member 60 for a single crystal pulling apparatus 100 is installed above a crucible 10 for melting a semiconductor raw material and used for rectifying an inert gas which flows from an upper part into a closed main body 50. For the gas rectifying member 60, a carbonaceous fiber formed product 61 is used as a base material, and a carbonized product of a thermosetting resin obtained by heating, curing and carbonizing the thermosetting resin is formed as an intermediate layer 62 on the surface of the base material. Further, a coating 63 consisting of a thermally decomposed carbon is formed on the surface of the intermediate layer 62. COPYRIGHT: (C)2005,JPO&NCIPI
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