发明名称 INTEGRATED POWER AMPLIFIER STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a multi-stage integrated power amplifier structure that improves amplifier efficiency and linearity. SOLUTION: The integrated power amplifier structure comprises a matched filter (6) including integrated capacitance, namely branched capacitance (13) and inductance (12) which performs impedance conversion between an input transistor (1) and an output transistor (2). The integrated power amplifier structure is adapted to form the inductance (12) of the matched filter (6) as a microstrip conductor. Thus, a linearity coefficient of the inductance (12) is remarkably increased, and the linearity and efficiency of the integrated power amplifier structure are improved. This configuration particularly has an advantage of being used in an integrated transmission structure. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005110283(A) 申请公布日期 2005.04.21
申请号 JP20040287938 申请日期 2004.09.30
申请人 INFINEON TECHNOLOGIES AG 发明人 DONIG GUENTER;BAKALSKI WINFRIED;WOHLMUTH HANS-DIETER;KITLINSKI KRZYSZTOF
分类号 H03F3/60;H03F1/02;H03F1/32;H03F1/56;H03F3/19;H03F3/195;H03F3/21;H03F3/213;(IPC1-7):H03F3/60 主分类号 H03F3/60
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