FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC HEAD

摘要

PROBLEM TO BE SOLVED: To achieve thin layers of an element without sharply deteriorating magnetic characteristics in a ferromagnetic tunnel junction element, a magnetic memory cell, and a magnetic head. SOLUTION: At least a pinned layer 3 in a ferromagnetic tunnel junction element having a lamination structure consisting of a foundation layer 1/a 0 to 5 nm-thick antiferromagnetic layer 2/the pinned layer 3/an insulating layer 4/a free layer 5 is shaped so that magnetic anisotropy arises more than that in the shape of the free layer 5. COPYRIGHT: (C)2005,JPO&NCIPI