| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for enhancing the characteristics and processability of a capacitor employing a dielectric film, and to provide its manufacturing process. SOLUTION: In the process for fabricating a semiconductor device comprising a capacitor employing a dielectric film (4), a composite oxide (5) is used as the mask material, when the dielectric film is etched. COPYRIGHT: (C)2005,JPO&NCIPI
|
| 申请公布号 |
JP2005108876(A) |
申请公布日期 |
2005.04.21 |
| 申请号 |
JP20030336023 |
申请日期 |
2003.09.26 |
| 申请人 |
TOSHIBA CORP;INFINEON TECHNOLOGIES AG |
发明人 |
YAMAKAWA KOJI;ITOKAWA HIROSHI;NAKAZAWA HIROSUKE;NATORI KATSUAKI;YAMAZAKI SOICHI;ARISUMI OSAMU;TANIGUCHI YASUYUKI;TOMIOKA KAZUHIRO;KANETANI HIROYUKI;EGGER ULRICH |
| 分类号 |
H01L27/105;H01L21/02;H01L21/311;H01L21/316;H01L21/3213;H01L21/8246;(IPC1-7):H01L27/105 |
主分类号 |
H01L27/105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
