| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that eliminates nonconformities such as peeling etc., caused by the bonding interface of an SOI substrate and that shows high reliability and high element performance. SOLUTION: A TFT array substrate (active matrix substrate) 10, equipped with the semiconductor device, is provided with a light-shielding film 11a (1st conductive layer) on the side of a substrate body 10A of a base insulating film (1st insulating film) 12 having the bonding interface, a capacity line (2nd conductive layer) 300 is provided on the semiconductor layer 1a via a 1st inter-layer insulating film (2nd insulating film) 41, and the light-shielding film 11a and capacity line 300 are electrically connected via a contact hole 92 formed penetrating the base insulating film 12, a contact hole 91 formed penetrating the 1st inter-layer insulating film 41, and a relay conductive layer 3b provided between both the contact holes 91 and 92. COPYRIGHT: (C)2005,JPO&NCIPI |
