| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device which features excellent antiblooming characteristics and can reduce readout voltage, and which has low smear even if it is shrunk in size. SOLUTION: The solid state imaging device 1 has such a structure that an optical sensor 2 and a vertical transfer register 3 are formed, and a readout gate 18 is formed between the optical sensor 2 and the vertical transfer register 3 to form an imaging region. In the imaging region, the other region than the optical sensor 2 is covered by a lightproof film 22. The lightproof film 22 also serves as a readout electrode for reading out signal charges accumulated in the optical sensor 2 to the vertical transfer register 3. Except when reading out the signal charges, such voltage as to form an inverse layer 28 on the surface of the readout gate is applied to the lightproof film 22. When reading out the signal charges, such voltage as to remove the inverse layer 28 is applied to the lightproof film. COPYRIGHT: (C)2005,JPO&NCIPI
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