| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including an insulated gate type bipolar transistor (IGBT) of a device structure in which motion control is easy and secured. SOLUTION: A PMOS transistor Q2 provided to short-circuit between a base and an emitter of an N type IGPT when turned off comprises a P diffusion area 5, P diffusion area 6 and a conductive film 10 and a second gate electrode 15 which are provided on a surface of an N-epitaxial layer 2 between the P diffusion area 5 and the P diffusion area 6 through a gate oxide film 21. The gate oxide film 21 is formed with a film thickness having a gate breakdown voltage that is higher than a device breakdown voltage of a regular field oxide film or the like. COPYRIGHT: (C)2005,JPO&NCIPI |
