| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve the resistance against electrostatic breakdown, while controlling the increase in chip size. SOLUTION: The semiconductor device is formed by inserting a protection element 2, comprising JFETs 2a, 2b, 2c of polysilicon layers connected in series in the three stages, between a gate electrode G and a source electrode S of a semiconductor device 1 of a power MOSFET or IGBT. Even if a high voltage, such as static electricity is either a positive or a negative polarity, the gate insulating film of the semiconductor active element 3 of the semiconductor device 1 is protected. COPYRIGHT: (C)2005,JPO&NCIPI |
