MAGNETORESISTIVE MEMORY CONTAINING MTJ LAYER COMPRISING TUNNEL FILM OF CONSTANT THICKNESS, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a magnetic RAM and that contains an MTJ layer comprising a tunnel film of constant thickness and to provide a manufacturing method therefor. SOLUTION: An MRAM is composed of a memory cell that comprises a single transistor and a single MTJ layer connected to it. The MTJ layer comprises a lower electrode, a lower magnetic film, a tunnel film which does not have bends and has a uniform thickness, and an upper magnetic film. The lower electrode of the MRAM is composed of a first lower electrode and a second lower electrode which is amorphous. Here, the lower electrode may be composed of the first lower electrode and the second lower electrode of amorphous. Further, an amorphous flattened film is provided between the lower electrode and the lower magnetic film. COPYRIGHT: (C)2005,JPO&NCIPI