| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOSFET gate structure which includes a niobium monoxide gate on a gate dielectric. SOLUTION: The MOSFET gate structure includes a gate dielectric on a substrate and a gate, where niobium monoxide occupies majority on the gate dielectric. The niobium monoxide gate may have an appropriate, low work function, since the niobium monoxide gate is used as an NMOS gate. The gate, where the majority is occupied by the niobium monoxide, may have a work function of about 4.1eV-about 4.4eV. COPYRIGHT: (C)2005,JPO&NCIPI
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