| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching compound dissolving hard to dissolve tantalum oxide at high rate, without dissolving coexisting semiconductor materials, especially silicon compounds such as silicon oxide. SOLUTION: An etching compound of tantalum oxide, containing hydrogen fluoride and water, is employed. The etching compound contains hydrogen peroxide and a polyvalent carboxylic acid (at least one kind selected from among a group of oxalic acid, citric acid, malic acid, phthalic acid, and maleic acid), as required. COPYRIGHT: (C)2005,JPO&NCIPI
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