| 摘要 |
A structure of the relaxed SiGe epitaxial layer and a fabrication method comprises a Si substrate, a Si interfacial layer positioning on the substrate, a SiGe graded buffer layer positioning on the Si interfacial layer, and a uniform SiGe epitaxy layer positioning on the SiGe graded buffer layer. It uses a mesa structure and obtains a highly relaxed SiGe epitaxial layer with a low defect density of threading dislocations, a smooth surface. A strained Si can be formed on the strained relaxation layer. The strained Si, the strained Ge, the strained Si/Ge can apply to the high-speed planar electronic devices. By using a mesa structure, it can efficiently decrease the required growth time and cost in the conventional relaxed SiGe epitaxy layer.
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