发明名称 Manufacturing methods of MEMS device
摘要 The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.
申请公布号 US2005085000(A1) 申请公布日期 2005.04.21
申请号 US20040961162 申请日期 2004.10.12
申请人 SONY CORPORATION 发明人 IKEDA KOICHI;KINOSHITA TAKASHI
分类号 B81C1/00;B81B3/00;H01L21/00;(IPC1-7):H01L21/00 主分类号 B81C1/00
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