RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION

摘要

A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate. In one embodiment, a method of forming a ruthenium layer on a substrate for use in integrated circuit fabrication is provided which includes positioning the substrate within a process chamber, chemisorbing a ruthenium-containing layer on the substrate by exposing the substrate to bis(2,4-dimethylpentadienyl)ruthenium, purging the process chamber, exposing the ruthenium-containing layer to a reagent, and reacting the reagent with the ruthenium-containing layer to form the ruthenium layer on the substrate.