| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide the structure of a transistor and its manufacturing method, where a drain is raised from a substrate surface. <P>SOLUTION: A salient part is formed on a drain that maintains a high voltage, and the ion of high concentration is implanted on the salient part, forming a high-concentration drain region. The salient part is formed of a region which is doped in low concentration as with a low concentration drain region. Thus, a transistor that occupies less area is manufactured, and a process margin for forming the high-concentration drain is assured in a manufacturing process. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
