| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element for magnetic head that uses the BMR effect and is high in stability or sensitivity of the magnetic domain of a free layer or nanojunction, and to provide a magnetic memory element using the element. SOLUTION: In the magnetoresistive effect element, a buffer layer 2, antiferromagnetic layer 3, fixed layer 4, insulating layer 6 having one, two, or more nanojunctions joints 5 having lengths equal to or shorter than the Fermi length, a free layer 7 formed of a ferromagnetic layer, and magnetic stability control layer 8, are successively formed on a substrate 1, in this order. The above-mentioned problem is solved by forming the fixed layer 4, by successively forming a first ferromagnetic layer 4A, a nonmagnetic layer 4B, and a second ferromagnetic layer 4C, in this order starting from the antiferromagnetic layer 3 side and the magnetic stability control layer 8, by successively forming a nonmagnetic layer 8A, a ferromagnetic layer 8B, and an antiferromagnetic layer 8C, in this order starting from the free layer 7 side. COPYRIGHT: (C)2005,JPO&NCIPI
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