| 摘要 |
PROBLEM TO BE SOLVED: To enable manufacture of the quantum structure of an element for a quantum effect device by only the crystal growth technology, without application of special processings, especially to its quantum dots or quantum wires in a stage previous to crystal growth. SOLUTION: A single crystal of the same material as that of a compound semiconductor substrate 1 is grown on the substrate 1 as a buffer layer 2, and a growth layer 3 of a semiconductor material, having a lattice constant larger than that of the single crystal material of the buffer layer 2, is grown on the buffer 2. By utilizing a dislocation 4 generated at an interface between the buffer layer 2 and the growth layer 3, a quantum structure 6 is formed at a desired location, corresponding to the dislocation 4. COPYRIGHT: (C)2005,JPO&NCIPI |
