ETCHING COMPOSITION HAVING HIGH ETCHING SELECTIVITY, METHOD OF PREPARING THE SAME, METHOD OF SELECTIVELY ETCHING AN OXIDE FILM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME,申请号KR20040000235-传众专利搜索

发明名称	ETCHING COMPOSITION HAVING HIGH ETCHING SELECTIVITY, METHOD OF PREPARING THE SAME, METHOD OF SELECTIVELY ETCHING AN OXIDE FILM, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
摘要
申请公布号	KR20050037332(A)	申请公布日期	2005.04.21
申请号	KR20040000235	申请日期	2004.01.05
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	CHON, SANG MUN;DON, IN HOI;HAN, MYOUNG OK;JUN, PIL KWON;KO, YONG KYUN;LEE, SANG MI;LIM, KWANG SHIN
分类号	H01L21/306;(IPC1-7):H01L21/306	主分类号	H01L21/306
代理机构		代理人
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