| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element being capable of easily obtaining a stable ohmic contact and having a high reliability and a manufacturing method for the semiconductor element. SOLUTION: A p-type GaAs layer 2 in a thickness of 300 nm is formed on an n-type GaAs substrate 1. The patterns of photo-resists 3 and 4 are formed on the layer 2 by a photolithographic method, and Ni films 5 in the thickness of 20 nm, Pt films 6 in the thickness of 100 nm, and Au films 7 in the thickness of 300 nm, are formed successively to the partial regions of the layer 2 and on the photo-resists 4. The Ni films 5, the Pt films 6 and the Au films 7 formed on the photo-resists 4 are removed together with the photo-resists 3 and 4 by a lift-off method. Accordingly, an electrode pattern composed of the Ni film 5, the Pt film 6 and the Au film 7 is formed on the layer 2. Lastly, a heat treatment is conducted on the basis of the temperature conditions of a specified heat treatment in a reducing-gas atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI
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