| 摘要 |
A method ( 10 ) for etching a through via ( 116, 118 ) on a wafer ( 100 ) of semiconductor material ( 102 ), wherein the wafer ( 100 ) has a front side surface ( 110 ) and a backside surface ( 106 ), is described. A layer of photoresist material ( 104 ) is applied to the backside surface ( 106 ). The layer of photoresist ( 104 ) is then exposed to a light source through a mask having a pre-selected pattern, wherein the developed photoresist is removed to form at least one via ( 112, 114 ) in the remaining photoresist layer ( 104 ). The remaining photoresist layer ( 104' ) is then baked in order to form a hardened, remaining photoresist layer ( 104'' ). The semiconductor material 102 adjacent to the at least one via ( 112, 114 ) is then gas plasma etched to form a through via ( 116, 118 ) between the backside surface ( 106 ) and the front side surface ( 110 ). The hardened, remaining photoresist layer ( 104'' ) is then removed and a layer of conductive material ( 120 ) is then applied to the surface of the through via ( 116, 118 ) to establish electrical connectivity between the backside surface ( 106 ) and the front side surface ( 110 ).
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