发明名称 |
Etching apparatus, semiconductor devices and methods of fabricating semiconductor devices |
摘要 |
Etching apparatus, semiconductor devices and methods for fabricating semiconductor devices are disclosed. An example semiconductor device comprises: a semiconductor substrate; and a trench formed in the semiconductor substrate for isolating the semiconductor device. The trench has an opening width which is narrower than any other part of the trench.
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申请公布号 |
US2005085089(A1) |
申请公布日期 |
2005.04.21 |
申请号 |
US20040956607 |
申请日期 |
2004.09.30 |
申请人 |
KANG JUNG H. |
发明人 |
KANG JUNG H. |
分类号 |
H01L21/3065;H01L21/762;(IPC1-7):H01L21/302;H01L21/20;H01L21/76;H01L29/00 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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