发明名称 Etching apparatus, semiconductor devices and methods of fabricating semiconductor devices
摘要 Etching apparatus, semiconductor devices and methods for fabricating semiconductor devices are disclosed. An example semiconductor device comprises: a semiconductor substrate; and a trench formed in the semiconductor substrate for isolating the semiconductor device. The trench has an opening width which is narrower than any other part of the trench.
申请公布号 US2005085089(A1) 申请公布日期 2005.04.21
申请号 US20040956607 申请日期 2004.09.30
申请人 KANG JUNG H. 发明人 KANG JUNG H.
分类号 H01L21/3065;H01L21/762;(IPC1-7):H01L21/302;H01L21/20;H01L21/76;H01L29/00 主分类号 H01L21/3065
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