Method for forming oriented film, oriented film, substrate for electronic device, liquid crystal panel, and electronic device

摘要

A method for forming an oriented film is provided for forming an oriented film on a base material by irradiating the surface of the base material where the oriented film will be formed with an ion beam comprising nitrogen ions from a direction inclined at a prescribed angle theta_a with respect to the direction perpendicular to the surface, while evaporating carbon from an evaporation source. The prescribed angle, theta_a, is preferably 45-89°. The accelerating voltage of the ion beam comprising nitrogen ions is preferably 100-500 V. The electric current of the ion beam comprising nitrogen ions is preferably 10-500 mA.