发明名称 SEMICONDUCTOR-ON-INSULATOR ARTICLE AND METHOD OF MAKING SAME
摘要 A semiconductor structure includes a substrate. A first semiconductor layer is formed on the substrate and being converted into a porous layer. The porous layer is further oxidized to form a buried oxide layer.
申请公布号 WO2004073043(A3) 申请公布日期 2005.04.21
申请号 WO2004US04253 申请日期 2004.02.13
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY;CHENG, ZHIYUAN;FITZGERALD, EUGENE, A. 发明人 CHENG, ZHIYUAN;FITZGERALD, EUGENE, A.
分类号 H01L21/20;H01L21/762;H01L27/01 主分类号 H01L21/20
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